QS5U23 transistor rev.a 1/4 2.5v drive pch+sbd mos fet QS5U23 z structure z external dimensions (unit : mm) silicon p-channel mos fet each lead has same dimensions tsmt5 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 (1) (3)(2) (4)(5) 2.8 1.6 0.4 1.9 2.9 0.950.95 abbreviated symbol : u23 schottky barrier diode z features 1) the QS5U23 combines pch mos fet with a schottky barrier diode in a tsmt5 package. 2) low on-state resistance with fast switching. 3) low voltage drive(2.5v) 4) built-in schottky barrier diode has low forward voltage. z applications load switch , dc/dc conversion z packaging specifications z equivalent circuit taping QS5U23 type tr 3000 package basic ordering unit (pieces) code (1) ?1 esd protection diode (1)anode (2)source (3)gate (4)drain (5)cathode (2) (3) (4) (5) ?2 body diode ?1 ?2
QS5U23 transistor rev.a 2/4 z absolute maximum ratings (ta=25 c) v rm v r i f i fsm tj parameter v v dss symbol ?20 v v gss 12 a i d 1.5 a i dp 6.0 a i s ?0.75 a i sp ?3.0 v 20 a 0.5 a 2.0 c 150 c tch 150 v 30 limits unit channel temperature w / element p d 0.9 power dissipation w / total p d 1.25 c tstg ?55 to +150 total power dissipation range of storage temperature drain-source voltage gate-source voltage drain current continuous pulsed continuous pulsed source current (body diode) repetitive peak reverse voltage reverse voltage forward current forward current surge peak junction temperature ?1 ?1 ?3 ?2 w / element p d 0.7 power dissipation ?3 ?3 ?1 pw10s, duty cycle1% ?2 60hz ? 1cyc. ?3 mounted on a ceramic board z electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss y fs c oss c rss min. ? ? 20 ? ? 0.7 ? ? 1.0 ? ? ? ? ? ? 160 325 ? 60 40 10 ? ? 1 ? 2.0 200 ? 260 340 ? ? ? ? av gs = 12v/ v ds = 0v i d = ?1ma/ v gs = 0v v ds =? 20v/ v gs = 0v v ds = ?10v, i d = ?0.75a v ds = ?10v/ i d = ?1ma i d = ?1.5a, v gs =? 4.5v i d = ?0.75a, v gs =? 2.5v v ds = ?10v v gs = 0v f = 1mhz v a v m ? m ? pf s pf pf t d(on) ? 10 ? i d = ?0.75a ns t r ? 4.2 ? nc t d(off) ? 1.0 ? nc t f ? 1.1 ? nc typ. max. unit conditions gate-source leakage gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn?on delay time turn off delay time gate?drain charge fall time drain-source breakdown voltage static drain?source on?state resistance zero gate voltage drain current ? ? ? ? ? ? ? 180 240 m ? i d = ?1.5a, v gs =? 4v rise time ?pulsed total gate charge 10 35 10 ns ns ns v dd v gs =?4.5 v r l = 20? r g = 10? qg qgs qgd gate?source charge < mosfet > < body diode (source? drain) > forward voltage v sd ? ? ? ? ? ? ? ? ? 1.2 v i s = ?0.75a/ v gs = 0v < di > foward voltage drop reverse current v f i r ? ? ? ? ? ? 0.36 0.47 100 v v a i f = 0.1a i f = 0.5a v r = 20v v gs =?4.5 v i d = ?1.5a v dd ?1 5v ?15
QS5U23 transistor rev.a 3/4 z electrical characteristic curves fig.1 typical transfer characteristic s 0 0.5 1.0 0.001 0.1 1 0.01 10 1.5 gate?source voltage : v gs [v] drain current : ?i d (a) 2.0 2.5 3.0 3.5 4.0 ta=125c 75c 25c ?25c v ds =?10v pulsed fig.2 static drain?source on?state resistance 0.1 1 10 100 1000 1 0 drain current : ?i d [a] static drain?source on?state resistance 75c 25c ?25 c ta=125 c r ds (on)[m?] vs. drain current v gs =?4.5v pulsed fig.3 static drain?source on?state resistance 0.1 1 10 100 1000 1 0 drain current : ?i d [a] static drain?source on?state resistance r ds (on)[m?] vs. drain current ta=125 c 75c 25c ?25c v gs =?4v pulsed fig.4 static drain?source on?state 0.1 1 10 100 1000 1 0 drain current : ?i d [a] static drain?source on?state resistance ta=125 c 75c 25c ?25c r ds (on)[m?] resistance vs. drain ?current v gs =?2.5v pulsed 10 01 2 8 4 26 0 static drain?source on?state resistance gate?source voltage : ?v gs [v] 50 100 150 200 250 300 350 400 i d=? 0.75a ?1.5a r ds (on)[m?] fig.5 static drain?source on?state resistance vs.gate?source voltage ta =25 c pulsed fig.6 static drain?source on?state 0.1 1 10 100 1000 1 0 drain current : ?i d [a] static drain-source on?state resistance resistance vs. drain current r ds (on)[m?] v gs =?2.5v ?4.0v ?4.5v ta =25 c pulsed 0 0.5 1.0 1.5 source?drain voltage : ?v sd [v] fig.7 reverse drain current 0.01 reverse drain current : ?i dr [a] 0.1 10 1 2 .0 ta=125c ?25c vs. source-drain current 25c 75c v gs =0v pulsed 0.01 0.1 1 10 10 0 drain?source voltage : ?v ds [v] fig.8 typical capactitance 10 100 10000 1000 vs. drain?source voltage capacitance : c [pf] c iss c oss c rss ta =25 c f=1mhz v gs =0v 0.01 0.1 1 1 0 drain current : ?i d [a] fig.9 switching characteristics 1 10 1000 100 t d(off) t d(on) t r t f switching time : t [ns] ta =25 c v dd =?15v v gs =?4.5v r g =10? pulsed
QS5U23 transistor rev.a 4/4 fig.10 dynamic input characteristic s 01 0 4 8 6 total gate charge : qg[nc] gate-source voltage: -v gs [v] 2345 1 2 3 5 6 7 ta =25 c v dd =?15v i d =?1.5a r g =10? pulsed forward voltage :v f [v] fig.11 forward temperature characteristic s forward current : i f [ma] 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 ta=125 c 75 c 25 c ?25 c reverse voltage : v r [v] f ig.12 reverse temperature characteristic s reverse current : i r [a] 0.0001 0.001 0.01 0.1 100 10 1 01020304 0 125c 75c 25c ?25c z measurement circuits f ig.13 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd 90% 10% 90% 10% 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.14 switching waveforms 50% 50% pulse width fig.15 gate charge measurement circuit v gs r g v ds d.u.t. i d r l v dd i g (const) fig.16 gate charge waveforms v gs qg qgs qgd v g charg e
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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